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AIP Advances 2, 012130 (2012); http://dx.doi.org/10.1063/1.3684600 (9 pages)

Spin-inversion in nanoscale graphene sheets with a Rashba spin-orbit barrier

Somaieh Ahmadi1, Mahdi Esmaeilzadeh1, Esmaeil Namvar2, and Genhua Pan3

1Department of Physics, Iran University of Science and Technology, Narmak, Tehran 16844, Iran
2Department of Physics, Tarbiat Moallem University, 49 Dr Mofatteh Avenue, Tehran 15614, Iran
3School of Computing and Mathematics, University of Plymouth, Plymouth, Devon, PL4 8AA, United Kingdom

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(Received 3 November 2011; accepted 12 January 2012; published online 1 February 2012)

Spin-inversion properties of an electron in nanoscale graphene sheets with a Rashba spin-orbit barrier is studied using transfer matrix method. It is found that for proper values of Rashba spin-orbit strength, perfect spin-inversion can occur in a wide range of electron incident angle near the normal incident. In this case, the graphene sheet with Rashba spin-orbit barrier can be considered as an electron spin-inverter. The efficiency of spin-inverter can increase up to a very high value by increasing the length of Rashba spin-orbit barrier. The effect of intrinsic spin-orbit interaction on electron spin inversion is then studied. It is shown that the efficiency of spin-inverter decreases slightly in the presence of intrinsic spin-orbit interaction. The present study can be used to design graphene-based spintronic devices.

© 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.

Article Outline

  1. INTRODUCTION
  2. THEORETICAL MODEL
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

KEYWORDS, PACS, and IPC

PACS

  • 72.80.Vp

    Electronic transport in graphene

  • 73.22.Pr

    Electronic structure of graphene

  • 71.70.Ej

    Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

International Patent Classification (IPC)

ARTICLE DATA

PUBLICATION DATA

ISSN

2158-3226 (online)

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Figures (click on thumbnails to view enlargements)

FIG.1
(Color online) Schematic illustration of a Rashba spin-orbit barrier with height (or spin-orbit strength) λR and length Lb.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(Color online) Electron transmission coefficient with spin-inversion (T↓→↑) and without spin-inversion (T↓→↓) as a function of electron incident angle θ for an arbitrary Rashba barrier height λR = 0.8. The other parameters are shown in the figure.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(Color online) Electron transmission coefficients T↓→↑ and T↓→↓ as a function of electron incident angle θ for Rashba barrier height λR = 0.493 at which perfect spin inversion can occur. The other parameters are the same as those in Fig. 2.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
(Color online) Electron transmission coefficients T↓→↑ and T↓→↓ in the presence of intrinsic SOI with Δ = 0.2. The other parameters are the same as those in Fig. 3.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.5
(Color online) (a) Barrier height λR and (b) efficiency of spin-inverter η as a function of barrier length Lb for perfect spin inversion.

FIG.5 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.6
(Color online) (a) A trapezoidal Rashba SOI barrier [blue (solid) lines] and a rectangular one [red (dashed) lines]. (b) Electron transmission coefficient with spin-inversion T↓→↑ as a function of electron incident angle θ for a trapezoidal barrier [blue (solid) curve] corresponding to Fig. 6(a). The electron transmission coefficient T↓→↑ for a rectangular barrier is also shown in this figure [red (dashed) curve] for comparison.

FIG.6 Download High Resolution Image (.zip file) | Export Figure to PowerPoint





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