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AIP Advances 1, 022109 (2011); http://dx.doi.org/10.1063/1.3584204 (8 pages)

A new route to graphene layers by selective laser ablation

S. Dhar1,2, A. Roy Barman1,3, G. X. Ni3, X. Wang1,3, X. F. Xu3, Y. Zheng3, S. Tripathy4, Ariando1,3, A. Rusydi1,3, K. P. Loh1,5, M. Rubhausen6, A. H. Castro Neto3,7, B. Őzyilmaz1,3, and T. Venkatesan1,2,3

1NUSNNI NanoCore, National University of Singapore, 117576, Singapore
2Department of Electrical and Computer Engineering, 117576, Singapore
3Department of Physics, National University of Singapore, 117542, Singapore
4IMRE, A*STAR, 117602, Singapore
5Department of Chemistry, National University of Singapore, 117576, Singapore
6Institut für Angewandte Physik, Universität Hamburg, D-20355, Hamburg, Germany and Center for Free Electron Laser Science (CFEL), D-22607 Hamburg, Germany
7Department of Physics, Boston University, Boston MA, 02215, USA

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(Received 5 January 2011; accepted 14 March 2011; published online 20 April 2011)

Selectively creating regions of spatially varying thickness may enable the utilization of the electronic properties of N-layer (N=1 or more) graphene and other similar layered materials (e.g., topological insulators or layered superconductors) for novel devices and functionalities on a single chip. The ablation threshold energy density increases dramatically for decreasing layer numbers of graphene originating from the dimensional crossover of the specific heat. For the 2D regime of graphite (up to N≈7) the dominant flexural mode specific heat (due to its N-1 dependence) gives rise to a strong layer number-dependence on the pulsed laser ablation threshold energy density, while for 3D regime (N>>7) the ablation threshold saturates due to dominant acoustic mode specific heat. As a result, several energy density windows exist between the minimum energy densities that are required for ablating single, bi, or more layers of graphene, allowing layer number selectivity.

© 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License

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KEYWORDS and PACS

Keywords

graphene, pulsed laser deposition, specific heat

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3584204

PUBLICATION DATA

ISSN

2158-3226 (online)

Publisher:

American Institute of Physics is a Member of CrossRef is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
A futuristic graphene integrated circuit (not to scale), wherein the desirable properties of various thicknesses of graphene layers are utilized along with strategic oxides (SiO2, ferroelectric, ferromagnetic, multiferroic, etc.) in response to various external stimuli, such as electric or magnetic fields. In the present illustration, the device structure is fabricated from a very thin single-crystal graphite sheet after subsequent patterning/selective ablation. The remaining graphite acts as a good ohmic contact and interconnection between the top Al metallization (which also acts as a self-aligned mask, protecting the underlying graphite) and the variable-thickness graphene-based devices.

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FIG.2
The laser irradiation-induced effects on a single and multilayer graphene at RT in Ar atmosphere: (a) pristine (b) 0.1 J/cm2 (c) 0.2 J/cm2 (d) 0.4 J/cm2.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Raman spectra of the laser irradiated graphene samples whose images are displayed in Fig. 1a , 1b , 1c , 1d, showing G, 2D, and D (in the inset) peaks.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
The ablation of graphene layers as a function of laser energy density and graphene layer-number N clearly showing the existence of the differences in ETh between single-, bi-or more layers.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.5
The graphene layer-number N, as a function of α-1 of N-layers (normalized to N = 1), shows an approximate N-0.38 dependence at 5 eV. The inset shows α as a function of incident photon energy.

FIG.5 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.6
The ablation threshold energy density (ETh) is plotted as a function of graphene layer-number N. The red solid line is the N-0.38 dependence that arises from only α, the green solid line is the N-1.38 dependence that arises from both α and flexural mode (Cf) specific heat (Eq. ( 2 )), and the blue solid line with the product of α and total specific heat (Eq. ( 3 )).

FIG.6 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.7
The four-terminal device resistance (blue solid line) versus gate voltage of a graphene sheet (dotted red line is the fit to Eq. ( 4 )) that has been irradiated at a laser energy density of 0.2 J/cm2 at RT in Ar atmosphere.

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