Defect-induced room temperature ferromagnetism in un-doped InN film

Q. Y. Xie, M. Q. Gu, L. Huang, F. M. Zhang, and X. S. Wu

Here we show epitaxial InN film, a well-known narrow gap semiconductor can be ferromagnetic without doping. The Curie temperature acquired is as high as 297K and the magnetic moment is 1.6μB, spawning a whole new class of potential room temperature DMS (diluted magnetic semiconductors).

AIP Advances 2, 012185 (2012)

Intrinsic thermoelectric power of group VB metals

Gunadhor Singh Okram

Reinvestigations of the thermopower α of group VB metals in polycrystalline forms in the temperature range of 6-300K revealed the critical nature of the sample surface contaminations and heat treatment especially for niobium. Strikingly small magnitude, negative sign, phonon drag dip and superconductivity not reported previously were observed in surface-cleaned single crystalline Nb. However, while thermopower magnitudes are small, mixed signs were found in the polycrystalline V, Nb and Ta samples.

AIP Advances 2, 012178 (2012)

Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

Rotem Har-Lavan, Omer Yaffe, Pranav Joshi, Roy Kazaz, Hagai Cohen, and David Cahen

The authors show how a simple, short chemical treatment, done in air, to adsorb a molecular monolayer onto the Si, pulls the semiconductor back into the fold of “well-behaved” semiconductors that obey the Schottky-Mott model. Nearly all of the systematic change in electrical behaviour of the Si surface, as a result of different molecular treatments, can be transferred to its interface with a metal, Hg in this case. Thus, for the first time, Si junction behavior could be predicted from the measured properties of its components according to the Schottky-Mott model.

AIP Advances 2, 012164 (2012)

Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires

Ashish Kumar, M. W. Akram, and Bahniman Ghosh

A multisubband semiclassical Monte Carlo approach was used to investigate spin polarized transport in InP and InSb nanowires. The authors found the dephasing rate to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components varied differently for both InP and InSb nanowires. The steady state spin distribution also showed a difference between the two III-V nanowires.

AIP Advances 2, 012165 (2012)