Non-aqueous energy storage devices using graphene nanosheets synthesized by green route
Dattakumar Mhamane, Anil Suryawanshi, Abhik Banerjee, Vanchiappan Aravindan, Satishchandra Ogale, and Madhavi Srinivasan
In this paper we report the use of triethylene glycol reduced graphene oxide (TRGO) as an electrode material for non-aqueous energy storage devices such as supercapacitors and Li-ion batteries. TRGO based non-aqueous symmetric supercapacitor is constructed and shown to deliver maximum energy and power densities of 60.4Wh/kg and 0.15 kW/kg, respectively. More importantly, symmetric supercapacitor shows an extraordinary cycleability (5000 cycles) with over 80% of capacitance retention.
Electrostatic properties of few-layer MoS2 films
Guolin Hao, Zongyu Huang, Yundan Liu, Xiang Qi, Long Ren, Xiangyang Peng, Liwen Yang, Xiaolin Wei, and Jianxin Zhong
Two-dimensional MoS2-based materials are considered to be one of the most attractive materials for next-generation nanoelectronics. The electrostatic properties are important in designing and understanding the performance of MoS2-based devices. By using Kelvin probe force microscopy, we show that few-layer MoS2 sheets exhibit uniform surface potential and charge distributions on their surfaces but have relatively lower surface potentials on the edges, folded areas as well as defect grain boundaries.
Failure of classical elasticity in auxetic foams
J. H. Roh, C. B. Giller, P. H. Mott, and C. M. Roland
Poisson's ratio, ν, was measured for four materials, a rubbery polymer, a conventional soft foam, and two auxetic foams. We find that for the first two materials, having ν ≥ 0.2, the experimental determinations of Poisson's ratio are in good agreement with values calculated from the shear and tensile moduli using the equations of classical elasticity. However, for the two auxetic materials (ν < 0), the equations of classical elasticity give values significantly different from the measured ν.
Reconfigurable resistive switching devices based on individual tungsten trioxide nanowires
Jie Guo, Yong Zhou, Huajun Yuan, Ding Zhao, Yanling Yin, Kuo Hai, Yuehua Peng, Weichang Zhou, and Dongsheng Tang
In the two-terminal Au/WO3 nanowire/Au electronic device with two Schottky barriers, drifting of oxygen vacancies under strong electric field induced by the bias voltage applied at short distance will result in the effective width of the reverse biased Schottky barrier decreasing, and then result in the memristive effect or resistive switching phenomenon. By unidirectional bias voltage sweeping, the Au/WO3 Schottky contact can be turned gradually and reversibly into Ohmic contact, and then the two-terminal Au/WO3 nanowire/Au resistive switching device can be reconfigured gradually and reversibly from non-rectifying state to either a forward or reverse rectifying state.
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Physics in China
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